| 摘要 |
PROBLEM TO BE SOLVED: To shorten the time required to form a gettering layer.SOLUTION: A processing method for a wafer comprises: an etching step in which, after the rear surface (1b) of a wafer (1) is ground to a predetermined thickness and the rear surface of the wafer is etched while the gas supplied to a chamber (11) accommodating the wafer is rendered plasmatic; and a gettering layer formation step in which a gettering layer (1c) is formed on the rear surface of the wafer. In the etching step, the rear surface of the wafer is plasma etched by rendering first gas plasmatic by the application of high frequency power having high frequency in the range of a first frequency band. In the gettering layer formation step, the first gas is replaced by the second gas, high frequency power having high frequency in the range of the first frequency band and low frequency power having low frequency in the range of a second frequency band are superposed and applied. Thus, the second gas is ionized and collided with the rear face of the wafer, thereby forming the gettering layer.SELECTED DRAWING: Figure 3 |
