| 摘要 |
An image sensor includes a semiconductor substrate of a first conductivity type, a photodiode of a second conductivity type located in the substrate, a hole accumulated device (HAD) region of the first conductivity type located over the photodiode, a thin surface diffusion region formed on the surface of the HAD region, and a transfer gate located over the surface of the substrate adjacent the HAD region. The image sensor further includes a first channel region of the first conductivity type located in the substrate and aligned below the transfer gate, a second channel region of the second conductivity type located in the substrate between said transfer gate and the first channel region, and an floating diffusion region which is located in the substrate and which electrically contacts the second channel region.
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