发明名称 UNDERLAYER FILM COMPOSITION AND METHOD FOR FORMING MULTILAYER RESIST PATTERN
摘要 <P>PROBLEM TO BE SOLVED: To provide an underlayer film composition for forming an underlayer film having a low reflectance for exposure light at a short wavelength and excellent etching resistance against oxygen plasma or the like, and to provide a method for forming a multilayer resist pattern. <P>SOLUTION: The underlayer film composition to be used for an underlayer film of a photoresist layer comprises a copolymer having a structural unit derived from an acryl monomer having adamantyl group which may have a substituent in a side chain and a structural unit derived from a hydroxystyrene derivative. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007240630(A) 申请公布日期 2007.09.20
申请号 JP20060059743 申请日期 2006.03.06
申请人 TOKYO OHKA KOGYO CO LTD 发明人 TAKAGI ISAMU;SATO KAZUFUMI;TANAKA TAKESHI
分类号 G03F7/11;G03F7/40;H01L21/027 主分类号 G03F7/11
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