| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma treatment device in which a high in-plane uniformity of plasma can be obtained and a temperature controlling can be easily done even in case of a larger treating vessel and a still higher frequency of a high frequency power source. <P>SOLUTION: An impedance adjusting part 60 is connected between a treatment vessel 2 of the plasma treatment device and an internal wall plate 6 made of a conductor provided to cover a wall part of the treatment vessel 2. An impedance value from a lower electrode 5, a cathode electrode, up to a matching box 42, a grounding case, through plasma, the internal wall plate 6 and the wall part of the treatment vessel 2 shall be bigger than the impedance value from the lower electrode 5 up to the matching box 42, a grounding case, through plasma, an upper electrode 3, an anode electrode, and the treatment vessel 2. <P>COPYRIGHT: (C)2007,JPO&INPIT |
