发明名称 |
LIGHT-EMITTING ELEMENT WAFER, LIGHT EMITTING ELEMENT, ELECTRONIC APPARATUS, AND METHOD OF PRODUCING LIGHT-EMITTING ELEMENT WAFER |
摘要 |
A light-emitting element wafer includes a supporting substrate, a luminescent layer that is formed of a semiconductor and has a first surface and a second surface, the first surface including a first electrode, the second surface including a second electrode, the second surface being arranged between the supporting substrate and the first surface, a junction layer that joins luminescent layer to the supporting substrate and is arranged between the supporting substrate and the second surface, a first inorganic film formed on the first surface, a second inorganic film formed between the junction layer and the second surface, an isolation trench portion that isolates elements and is formed to have a depth such that the isolation trench portion extends from the first inorganic film to the supporting substrate, and a third inorganic film that connects the first inorganic film and the second inorganic film. |
申请公布号 |
US2016358972(A1) |
申请公布日期 |
2016.12.08 |
申请号 |
US201615240266 |
申请日期 |
2016.08.18 |
申请人 |
Sony Semiconductor Solutions Corporation |
发明人 |
Saito Daisuke;Naito Hiroki;Koyama Takahiro;Aoki Sayaka;Kobayashi Arata |
分类号 |
H01L27/15;H01L33/62;H01L33/30;H01L33/00;H01L33/24 |
主分类号 |
H01L27/15 |
代理机构 |
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代理人 |
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主权项 |
1. A method of producing a light-emitting element, comprising:
forming a luminescent layer having a laminated structure in which a semiconductor is laminated on a first substrate; forming a first inorganic film on a first surface of the luminescent layer; removing the first substrate to expose a second surface of the luminescent layer, the second surface being opposite to the first surface; etching the luminescent layer from the second surface with the first inorganic film being an etching stop layer to form a first isolation trench that isolates the luminescent layer for the element; and forming a second inorganic film that covers the second surface and a wall surface and a bottom surface of the first isolation trench. |
地址 |
Kanagawa JP |