发明名称 LIGHT-EMITTING ELEMENT WAFER, LIGHT EMITTING ELEMENT, ELECTRONIC APPARATUS, AND METHOD OF PRODUCING LIGHT-EMITTING ELEMENT WAFER
摘要 A light-emitting element wafer includes a supporting substrate, a luminescent layer that is formed of a semiconductor and has a first surface and a second surface, the first surface including a first electrode, the second surface including a second electrode, the second surface being arranged between the supporting substrate and the first surface, a junction layer that joins luminescent layer to the supporting substrate and is arranged between the supporting substrate and the second surface, a first inorganic film formed on the first surface, a second inorganic film formed between the junction layer and the second surface, an isolation trench portion that isolates elements and is formed to have a depth such that the isolation trench portion extends from the first inorganic film to the supporting substrate, and a third inorganic film that connects the first inorganic film and the second inorganic film.
申请公布号 US2016358972(A1) 申请公布日期 2016.12.08
申请号 US201615240266 申请日期 2016.08.18
申请人 Sony Semiconductor Solutions Corporation 发明人 Saito Daisuke;Naito Hiroki;Koyama Takahiro;Aoki Sayaka;Kobayashi Arata
分类号 H01L27/15;H01L33/62;H01L33/30;H01L33/00;H01L33/24 主分类号 H01L27/15
代理机构 代理人
主权项 1. A method of producing a light-emitting element, comprising: forming a luminescent layer having a laminated structure in which a semiconductor is laminated on a first substrate; forming a first inorganic film on a first surface of the luminescent layer; removing the first substrate to expose a second surface of the luminescent layer, the second surface being opposite to the first surface; etching the luminescent layer from the second surface with the first inorganic film being an etching stop layer to form a first isolation trench that isolates the luminescent layer for the element; and forming a second inorganic film that covers the second surface and a wall surface and a bottom surface of the first isolation trench.
地址 Kanagawa JP