发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
[Summary];[Problem];A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high.;[Solving Means];By performing the formation of the pixel electrode 127, the source region 123 and the drain region 124 by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized. |
申请公布号 |
US2016358941(A1) |
申请公布日期 |
2016.12.08 |
申请号 |
US201615178919 |
申请日期 |
2016.06.10 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
YAMAZAKI Shunpei;KUWABARA Hideaki;ARAI Yasuyuki |
分类号 |
H01L27/12;H01L29/786;G02F1/1368;G02F1/1343;G02F1/1339;G02F1/1345;H01L29/66;G02F1/1362 |
主分类号 |
H01L27/12 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Atsugi-shi JP |