发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 [Summary];[Problem];A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high.;[Solving Means];By performing the formation of the pixel electrode 127, the source region 123 and the drain region 124 by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized.
申请公布号 US2016358941(A1) 申请公布日期 2016.12.08
申请号 US201615178919 申请日期 2016.06.10
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 YAMAZAKI Shunpei;KUWABARA Hideaki;ARAI Yasuyuki
分类号 H01L27/12;H01L29/786;G02F1/1368;G02F1/1343;G02F1/1339;G02F1/1345;H01L29/66;G02F1/1362 主分类号 H01L27/12
代理机构 代理人
主权项 1. (canceled)
地址 Atsugi-shi JP