METHOD OF MAKING A THREE-DIMENSIONAL MEMORY DEVICE HAVING A HETEROSTRUCTURE QUANTUM WELL CHANNEL

摘要

A cylindrical confinement electron gas confined within a two-dimensional cylindrical region can be formed in a vertical semiconductor channel extending through a plurality of electrically conductive layers comprising control gate electrodes. A memory film in a memory opening is interposed between the vertical semiconductor channel and the electrically conductive layers. The vertical semiconductor channel includes a wider band gap semiconductor material and a narrow band gap semiconductor material. The cylindrical confinement electron gas is formed at an interface between the wider band gap semiconductor material and the narrow band gap semiconductor material. As a two-dimensional electron gas, the cylindrical confinement electron gas can provide high charge carrier mobility for the vertical semiconductor channel, which can be advantageously employed to provide higher performance for a three-dimensional memory device.

主权项

1. A method of forming a monolithic three-dimensional memory device, comprising:
forming a stack of alternating layers comprising first material layers and second material layers over a substrate; forming a memory opening through the stack of alternating layers; forming a memory film in the memory opening; forming a first semiconductor material layer having a first band gap over the memory film; and forming a second semiconductor material layer having a second band gap that is narrower than the first band gap over the first semiconductor material layer, wherein a heterostructure quantum well is formed at an interface between the first semiconductor material layer and the second semiconductor material layer.