| 发明名称 |
SEMICONDUCTOR CHIP METAL ALLOY THERMAL INTERFACE MATERIAL |
| 摘要 |
Various apparatus and methods are disclosed. In one aspect, a method of manufacturing a thermal interface material on a semiconductor chip is provided. The method includes placing a preform of a combination of a first metal and a second metal on one of the semiconductor chip or a lid. The preform is liquid phase sintered to cause the combination to evolve to an equilibrium composition and bond to the semiconductor chip. |
| 申请公布号 |
US2016358884(A1) |
申请公布日期 |
2016.12.08 |
| 申请号 |
US201514731209 |
申请日期 |
2015.06.04 |
| 申请人 |
Cavasin Daniel;Setty Kaushik Mysore Srinivasa |
发明人 |
Cavasin Daniel;Setty Kaushik Mysore Srinivasa |
| 分类号 |
H01L23/00;B23K35/02;H01L23/498;B23K1/00;H01L23/053;H01L23/367 |
主分类号 |
H01L23/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a thermal interface material on a semiconductor chip, comprising:
placing a preform of a combination of a first metal and a second metal on one of the semiconductor chip or a lid; and liquid phase sintering the preform to cause the combination to evolve to an equilibrium composition and bond to the semiconductor chip. |
| 地址 |
Austin TX US |
