发明名称 CONNECTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
摘要 A connector structure and a manufacturing method thereof are provided. The connector structure includes a semiconductor substrate, a metal layer, a passivation layer, and a conductive structure. The metal layer is over the semiconductor substrate. The passivation layer is over the metal layer and includes an opening. The conductive structure is contacted with the metal layer in a patterned surface structure of the conductive structure through the opening of the passivation layer.
申请公布号 US2016358868(A1) 申请公布日期 2016.12.08
申请号 US201514731426 申请日期 2015.06.05
申请人 Inotera Memories, Inc. 发明人 SHIH Shing-Yih;WU Tieh-Chiang
分类号 H01L23/00 主分类号 H01L23/00
代理机构 代理人
主权项 1. A connector structure, comprising: a semiconductor substrate; a metal layer over the semiconductor substrate; a passivation layer over the metal layer and comprising an opening; and a conductive structure contacted with the metal layer in a patterned surface structure of the conductive structure through the opening of the passivation layer.
地址 Taoyuan City TW