| 发明名称 |
MECHANISMS FOR SEMICONDUCTOR DEVICE STRUCTURE |
| 摘要 |
Semiconductor device structures and methods for forming the same are provided. The method for forming a semiconductor device structure includes forming a dummy gate structure over a substrate and forming a dielectric layer over the substrate around the dummy gate structure. The method for forming a semiconductor device structure further includes removing the dummy gate structure and removing a portion of the dielectric layer to form a funnel shaped trench. The method for forming a semiconductor device structure further includes forming a gate structure in a bottom portion of the funnel shaped trench and filling a hard mask material in a top portion of the funnel shaped trench to form a funnel shaped hard mask structure. |
| 申请公布号 |
US2016358779(A1) |
申请公布日期 |
2016.12.08 |
| 申请号 |
US201615240680 |
申请日期 |
2016.08.18 |
| 申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
LIN Hsin-Ying;WANG Mei-Yun;WANG Hsien-Cheng;YANG Fu-Kai;LIU Shih-Wen;HSU Audrey Hsiao-Chiu |
| 分类号 |
H01L21/28;H01L21/768;H01L29/66 |
主分类号 |
H01L21/28 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a semiconductor device structure, comprising:
forming a dummy gate structure over a substrate; forming a dielectric layer over the substrate around the dummy gate structure; removing the dummy gate structure; removing a portion of the dielectric layer to form a funnel shaped trench; forming a gate structure in a bottom portion of the funnel shaped trench; and filling a hard mask material in a top portion of the funnel shaped trench to form a funnel shaped hard mask structure. |
| 地址 |
Hsin-Chu TW |
