| 发明名称 |
SEMICONDUCTOR MANUFACTURING SYSTEM AND SEMICONDUCTOR MANUFACTURING METHOD |
| 摘要 |
In one embodiment, a semiconductor manufacturing system includes a gas supply module configured to supply an etching gas. The system further includes a chamber configured to house a substrate. The system further includes a metal member housing provided outside the chamber and configured to house a metal member, the metal member housing being configured to introduce the etching gas and to discharge a metal-containing gas that contains a metal etched from the metal member by the etching gas. Furthermore, the chamber is configured to introduce the metal-containing gas discharged from the metal member housing and to form a metal film on the substrate by the metal-containing gas. |
| 申请公布号 |
US2016358762(A1) |
申请公布日期 |
2016.12.08 |
| 申请号 |
US201514836080 |
申请日期 |
2015.08.26 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
BEPPU Takayuki;NAKAJIMA Kazuaki;OMOTO Seiichi |
| 分类号 |
H01J37/32;H01L21/285;C23C16/455;C23C16/08;C23C16/18 |
主分类号 |
H01J37/32 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor manufacturing system comprising:
a gas supply module configured to supply an etching gas; a chamber configured to house a substrate; and a metal member housing provided outside the chamber and configured to house a metal member, the metal member housing being configured to introduce the etching gas and to discharge a metal-containing gas that contains a metal etched from the metal member by the etching gas, wherein the chamber is configured to introduce the metal-containing gas discharged from the metal member housing and to form a metal film on the substrate by the metal-containing gas. |
| 地址 |
Minato-ku JP |
