| 摘要 |
Proposed are an epitaxial growth device, a method of manufacturing an epitaxial wafer, and a lift pin for an epitaxial growth device, with which it is possible to reduce the generation of scratches on the reverse surface of an epitaxial silicon wafer, and to reduce the attachment of particles onto the obverse surface of the wafer. An epitaxial growth device which is provided, inside a chamber, with a susceptor 4 on which a silicon wafer W is placed, a support shaft which supports the susceptor 4 from below and which comprises a main column located coaxially with the center of the susceptor 4 and support arms 17b extending radially from the main column, and lift pins 15 which are provided with freedom to travel in the vertical direction and are inserted through through-holes 4h provided in the susceptor 4 and through-holes 17h provided in the support arms 17b, wherein the silicon wafer W is caused to become detached from and attached to the susceptor 4 by raising and lowering the lift pins 15. The epitaxial growth device is characterized in that: at least an obverse surface region of each lift pin 15 is formed from a material having a lower hardness than the susceptor 4; the surface roughness of straight body portion upper regions 15d of the lift pins 15, which pass through the through-holes 4h in the susceptor 4, is at least equal to 0.1 µm and at most equal to 0.3 µm; and the surface roughness of straight body portion lower regions 15c of the lift pins 15, which pass through the through-holes 17h in the support arm 17b, is at least equal to 1 µm and at most equal to 10 µm. |
