SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

The semiconductor storage device according to an embodiment is provided with: a semiconductor pillar that extends in a first direction; a first electrode that extends in a second direction intersecting the first direction; a second electrode provided between the semiconductor pillar and the first electrode; a first insulating film provided between the semiconductor pillar and the second electrode; and a second insulating film provided between the first electrode and the second electrode. The second electrode includes a thin plate portion that is disposed at the first electrode side and a thick plate portion that is disposed at the semiconductor pillar side and that has a length in the first direction longer than that of the thin plate portion.