MTJ STRUCTURE HAVING VERTICAL MAGNETIC ANISOTROPY

摘要

Provided is a magnetic tunneling junction (MTJ) structure having (PMA). The MJT structure includes a seed layer including a tungsten-based substance, a first ferromagnetic layer that is positioned on the seed layer, includes a boron-based ferromagnetic material and has PMA, a tunneling barrier layer positioned on the first ferromagnetic layer, and a second ferromagnetic layer that is positioned on the tunneling barrier layer and has PMA, wherein the seed layer has a thickness in a range of 1 nm to 10 nm. Accordingly, by using the tungsten-based substance as a seed layer substance, the MTJ structure may be provided in which crystallinity of the first ferromagnetic layer is maintained even at a high temperature in a range of 350° C. to 400° C., a problem of the PMA reduction is prevented, and therefore, thermal stability is improved.

主权项

1. A magnetic tunneling junction (MTJ) structure having perpendicular magnetic anisotropy (PMA), comprising:
a seed layer including a tungsten-based material; a first ferromagnetic layer that is positioned on the seed layer, includes a boron-based ferromagnetic material, and has PMA; a tunneling barrier layer positioned on the first ferromagnetic layer; and a second ferromagnetic layer that is positioned on the tunneling barrier layer and has PMA, wherein the seed layer has a thickness in a range of 1 nm to 10 nm.