METHODS OF FORMING SEMICONDUCTOR DEVICES INCLUDING TRENCH WALLS HAVING MULTIPLE SLOPES

摘要

A semiconductor device includes a gate spacer defining a trench. The trench includes a first part and a second part sequentially positioned on a substrate. An inner surface of the first part has a slope of an acute angle and an inner surface of the second part has a slope of a right angle or obtuse angle with respect to the substrate. A gate electrode fills at least a portion of the trench.

主权项

1. A method of forming a semiconductor device, the method comprising:
forming a dummy gate electrode on a substrate; forming a gate spacer on a side surface of the dummy gate electrode; forming an interlayer insulation film on the gate spacer opposite the dummy gate electrode; recessing the interlayer insulation film relative to the gate spacer to expose top surfaces of the gate spacer and the dummy gate electrode; recessing the dummy gate electrode relative to the gate spacer to expose an inner surface of a top portion of the gate spacer; reducing a thickness of the top portion of the gate spacer; removing the dummy gate electrode; and forming a gate electrode on the inner surface of the gate spacer.