Semiconductor-On-Insulator With Back Side Heat Disspation

摘要

Embodiments of the present invention provide for the enhancement of transistors in a semiconductor structure using a strain layer. The structure comprises a patterned layer consisting of an excavated region and a pattern region, a strain layer located in the excavated region and on the pattern region, an active layer located above the strain layer, a field effect transistor formed in the active layer, and a handle layer located above the active layer. The field effect transistor comprises a source, a drain, and a channel. The channel lies completely within a lateral extent of the pattern region. The source and the drain each lie only partially within the lateral extent of the pattern region. The strain layer alters a carrier mobility of the channel. In some embodiments, the strain layer is introduced to the back side of a semiconductor-on-insulator structure.

主权项

1. A singulated semiconductor-on-insulator (SOI) structure comprising:
an active layer including a transistor having a source, a gate, and a drain; a patterned layer formed on a back side of the active layer, wherein the patterned layer includes insulator material etched in a pattern, wherein the pattern includes a portion of insulator material formed below the gate, wherein a lateral dimension of the gate lies entirely within a lateral dimension of the portion of insulator material and the source and drain each lie only partially within the lateral dimension of the portion of insulator material; and a strain layer deposited below the patterned layer and covering the portion of insulator material as well as an excavated region of the strain layer adjacent the portion of insulator material.