发明名称 |
DEPTH SENSING PIXEL, COMPOSITE PIXEL IMAGE SENSOR AND METHOD OF MAKING THE COMPOSITE PIXEL IMAGE SENSOR |
摘要 |
A method of making a composite pixel image sensor includes forming an image sensing array; and forming a depth sensing pixel. The depth sensing pixel includes a depth sensing photodiode; a first photo storage diode; and a first transistor configured to selectively couple the depth sensing photodiode to the first photo storage diode. The depth sensing pixel further includes a second photo storage diode different from the first photo storage device; and a second transistor configured to selectively couple the depth sensing photodiode to the second photo storage device. The depth sensing pixel further includes a first transfer gate configured to selectively couple the first photo storage diode to a first output node. The depth sensing pixel further includes a second transfer gate configured to selectively couple the second photo storage diode to a second output node. The method includes bonding the image sensing array to the depth sensing pixel. |
申请公布号 |
US2016358955(A1) |
申请公布日期 |
2016.12.08 |
申请号 |
US201615238078 |
申请日期 |
2016.08.16 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHAO Calvin Yi-Ping;CHOU Kuo-Yu;LIU Chih-Min |
分类号 |
H01L27/146;H04N5/222 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
1. A method of making a composite pixel image sensor, the method comprising:
forming an image sensing array; forming a depth sensing pixel, the depth sensing pixel comprising:
a depth sensing photodiode;a first photo storage diode;a first transistor configured to selectively couple the depth sensing photodiode to the first photo storage device;a second photo storage diode different from the first photo storage diode;a second transistor configured to selectively couple the depth sensing photodiode to the second photo storage device;a first transfer gate configured to selectively couple the first photo storage diode to a first output node; anda second transfer gate configured to selectively couple the second photo storage diode to a second output node; and bonding the image sensing array to the depth sensing pixel. |
地址 |
Hsinchu TW |