SEMICONDUCTOR DEVICE HAVING MULTIWORK FUNCTION GATE PATTERNS

摘要

A semiconductor device includes a semiconductor substrate having a first area and a second area, and a first gate pattern on the first area and a second gate pattern on the second area. The first gate pattern includes a first gate insulating pattern on the first area, a first gate barrier pattern on the first gate insulating pattern, and a first work function metal pattern on the first gate barrier pattern. The second gate pattern includes a second gate insulating pattern on the second area, a second gate barrier pattern on the second gate insulating pattern, and a second work function metal pattern on the second gate barrier pattern. The first gate barrier pattern includes a metal material different than the second gate barrier pattern.

主权项

1. A semiconductor device comprising:
a semiconductor substrate having a first conductivity type transistor area, the first conductivity type transistor area including a first area and a second area; and a first gate pattern on the first area and a second gate pattern on the second area, wherein the first gate pattern includes a first gate insulating pattern on the first area, a first gate barrier pattern on the first gate insulating pattern, and a first work function metal pattern on the first gate barrier pattern, the second gate pattern includes a second gate insulating pattern on the second area, a second gate barrier pattern on the second gate insulating pattern, and a second work function metal pattern on the second gate barrier pattern, and the first gate barrier pattern includes a metal material different than the second gate barrier pattern.