| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing an epitaxial wafer for a semiconductor light-emitting device that can be manufactured with improved reproducibility so that no thyristor characteristic does not appear in the semiconductor light-emitting device, having a direct transition high-concentration semiconductor uppermost layer using Zn as an additive between a window layer of a metal oxide and a second conductivity-type cladding layer. <P>SOLUTION: When successively laminating an emission section 10 in which an active layer 4 is sandwiched by a first cladding layer 3 and a second one 5, a contact layer 6 using Zn as an additive to a substrate 1, and a window layer 7 of the metal oxide on it, the supply of an additive raw material and a group III raw material is stopped while maintaining the formation temperature of the contact layer 6 after the formation of the contact layer 6 is completed, or the supply of the addition raw material and the group III raw material is stopped at the growth temperature or lower of the emission section 10 and at the formation temperature or higher of the contact layer 6, and a cooling process is performed after a time section for supplying only the group V raw material for 10 minutes or longer. Then, an ITO film 7 that is the window layer of the metal oxide is formed on the contact layer 6. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
