| 摘要 |
In order to reduce wiring resistance in active matrix substrates, this active matrix substrate comprises: a substrate 31; gate wires being a plurality of first wires arranged on the substrate 31 and extending in a first direction; source wires Si being a plurality of second wires arranged on the substrate 31 and extending in a second direction different from the first direction; a transistor 2 arranged corresponding to each intersection between the gate wires and the source wires and connected to the gate wires and the source wires; and an insulating layer. At least either the gate wires or the source wires Si are connected to transistor electrodes via a contact hole in the insulating layer and are formed using at least either a material having a thicker film thickness or a material having a lower resistance, compared to the transistor electrodes connected to each other via the contact hole in the insulating layer. |
