发明名称 MEMS PRESSURE SENSOR AND MEMS INERTIAL SENSOR INTEGRATION STRUCTURE
摘要 An MEMS pressure sensor and an MEMS inertial sensor integration structure. A first lower electrode (3a) and a first upper electrode (4a) form an air pressure sensitive capacitor, a second lower electrode (3b) and a second upper electrode (4b) form a reference capacitor, an inertia sensitive structure (4c) and a fixed electrode plate form an inertia detection capacitor, and a cover body (8) packages the inertia detection capacitor on a substrate. By means of the integration structure, an MEMS inertial sensor and an MEMS pressure sensor are integrated on a same substrate, and packaging of a whole chip can be completed through one-step packaging, thereby reducing the cost of chip packaging.
申请公布号 WO2016192372(A1) 申请公布日期 2016.12.08
申请号 WO2015CN97314 申请日期 2015.12.14
申请人 GOERTEK. INC 发明人 ZHENG, Guoguang
分类号 B81C1/00;B81B7/00 主分类号 B81C1/00
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