发明名称 SILICON CARBIDE DIODE ANTI-SURGE APPARATUS
摘要 A silicon carbide diode anti-surge apparatus comprises a parallel circuit of an SIC diode in a topological alternating-current input power factor correction (PFC) circuit of a boost switch power supply BOOST. One branch of the parallel circuit comprises a main SIC diode, and the other branch of the parallel circuit comprises an auxiliary SIC diode and a turn-on threshold offset module configured to shunt surges, where the auxiliary SIC diode and the turn-on threshold offset module are connected in series. The apparatus increases a turn-on voltage drop of a parallel circuit, enables the parallel circuit not to be turned on during normal work of the circuit, protects a main SIC diode in a shunting manner only during overflowing of the surges, and solves the problem about independent heat dissipation required for a SIC diode that resists a surge impact.
申请公布号 WO2016192448(A1) 申请公布日期 2016.12.08
申请号 WO2016CN77542 申请日期 2016.03.28
申请人 ZTE CORPORATION 发明人 ZHU, Houcun;LI, Changyuan;WANG, Jixin;LIANG, Xinchun
分类号 H02M1/32 主分类号 H02M1/32
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