发明名称 MASK INSPECTION APPARATUS AND MASK INSPECTION METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To easily detect both of a phase shift pattern defect and a normal mask pattern defect in a phase shift mask by an easy operation. <P>SOLUTION: The mask inspection apparatus 100 to inspect phase defects in an exposure mask 150 is equipped with a light source 110, an illumination optical system 120 to homogenize the light L emitting from the light source 110, and an objective optical system 130 to condense the light L exiting from the illumination optical system 120 and transmitting through an exposure mask 150 for imaging onto an observation plane 140. The mask inspection apparatus 100 is also equipped with: a phase difference filter 167 disposed on the pupil plane PL of the objective optical system in the region where the 0-order diffraction light transmitting through the exposure mask 150 passes; and an annular aperture diaphragm 163 on the pupil plane iPL of the illumination optical system, the aperture diaphragm having a conjugate feature to the phase difference filter 167. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005049663(A) 申请公布日期 2005.02.24
申请号 JP20030282245 申请日期 2003.07.30
申请人 SONY CORP 发明人 OZAWA KEN
分类号 G01N21/956;G03F1/30;G03F1/68;G03F1/84;(IPC1-7):G03F1/08 主分类号 G01N21/956
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