发明名称 |
High speed composite p-channel Si/SiGe heterostructure for field effect devices |
摘要 |
A method and a layered heterostructure for forming p-channel field effect transistors is described incorporating a plurality of semiconductor layers on a semiconductor substrate, a composite channel structure of a first epitaxial Ge layer and a second compressively strained SiGe layer having a higher barrier or a deeper confining quantum well and having extremely high hole mobility. The invention overcomes the problem of a limited hole mobility for a p-channel device with only a single compressively strained SiGe channel layer.
|
申请公布号 |
US6858502(B2) |
申请公布日期 |
2005.02.22 |
申请号 |
US20010989770 |
申请日期 |
2001.11.20 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHU JACK OON;HAMMOND RICHARD;ISMAIL KHALID EZZELDIN;KOESTER STEVEN JOHN;MOONEY PATRICIA MAY;OTT JOHN A. |
分类号 |
H01L29/161;H01L21/338;H01L29/10;H01L29/778;H01L29/78;H01L29/812;(IPC1-7):H01L21/336 |
主分类号 |
H01L29/161 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|