| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for dividing a wafer capable of suppressing formation of an unnecessary current path and reducing device failures.SOLUTION: A method for dividing a wafer comprises the steps of: forming two first grooves (303, 303a, 303b) deeper than an insulating film (301) on a semiconductor substrate (300) at a depth reaching the semiconductor substrate and at intervals (d) exceeding thickness of a cutting blade (261) by irradiating a wafer (W) in which a surface film (302) having a conductive material is formed on the semiconductor substrate via the insulating film with a laser beam along a division schedule line (S) of the wafer; forming two second grooves (305, 305a, 305b) at a depth not reaching the semiconductor substrate and reaching the insulating film, and outside and in a width direction of the first groove in the division schedule line by irradiating the wafer with a laser beam; and positioning the cutting blade at the region sandwiched between the two first grooves and cutting the wafer along the division schedule line. |
