METHOD FOR PURIFYING A SUBSTRATE IN CRYSTALLINE SILICON AND METHOD FOR MANUFACTURING A PHOTOVOLTAIC CELL

摘要

Process of purifying a crystalline silicon substrate comprises extracting impurities by external gettering effect and heating the substrate at a temperature of 750-1000[deg] C, for 1 second to 10 minutes, followed by cooling the substrate at room temperature, before the extraction step. An independent claim is included for a process for elaboration of photovoltaic cell type comprising texturation of the surface of the crystalline silicon substrate obtained by the process.