发明名称 Magnetic random access memory
摘要 MTJ elements are accumulated in a plurality of portions on a semiconductor substrate. A first conductive line functioning as a read line and extending in the X direction is connected to pin layers of the MTJ elements. A second conductive line functioning as a write line and read line and extending in the X direction is connected to free layers of the MTJ elements. A write line extends in the Y direction and is shared with two MTJ elements present above and below the write line. The two MTJ elements present above and below the write line are arranged symmetric to the write line.
申请公布号 US6807086(B2) 申请公布日期 2004.10.19
申请号 US20020305988 申请日期 2002.11.29
申请人 发明人
分类号 G11C11/15;(IPC1-7):G11C11/00 主分类号 G11C11/15
代理机构 代理人
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