发明名称 Array containing charge storage and dummy transistors and method of operating the array
摘要 An array of transistors includes a plurality of charge storage transistors and a plurality of dummy transistors interspersed with the plurality of charge storage transistors. Each of the plurality of the dummy transistors is made using the same photolithographic masking steps as each of the plurality of the charge storage transistors. A method of operating the array includes programming and/or erasing the array of transistors, and reading the plurality of charge storage transistors but not the plurality of dummy transistors.
申请公布号 US6807119(B2) 申请公布日期 2004.10.19
申请号 US20020325737 申请日期 2002.12.23
申请人 MATRIX SEMICONDUCTOR, INC. 发明人 FASOLI LUCA;ILKBAHAR ALPER;SCHEUERLEIN ROY
分类号 G11C16/04;(IPC1-7):G11C7/00 主分类号 G11C16/04
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