发明名称 |
BONDED WAFER PROCESS INCORPORATING DIAMOND INSULATOR |
摘要 |
A semiconductor-on-insulator structure incorporating a layer of diamond material and method for preparing such. The structure comprises a layer containing diamond material and having a first surface. A layer of silicon nitride is formed on the first surface and a layer of semiconductor material is positioned over the silicon nitride layer. In one embodiment of the method there is provided a removable deposition surface. A layer of crystalline diamond material is formed on the deposition surface. A first surface of the diamond material is separated from the deposition surface. The structure is useful for formation of integrated circuits thereon. |
申请公布号 |
EP0719452(B1) |
申请公布日期 |
2001.09.12 |
申请号 |
EP19940910896 |
申请日期 |
1994.03.09 |
申请人 |
HARRIS CORPORATION |
发明人 |
SCHRANTZ, GREGORY A.;LINN, JACK, H.;BELCHER, RICHARD, W. |
分类号 |
H01L21/02;H01L21/20;H01L21/58;H01L21/762;H01L23/373;H01L27/12 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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