| 摘要 |
PROBLEM TO BE SOLVED: To obtain a photosensitive polysilazane composition which can form a film, especially which enables micropatterning process with light and which can be used as a positive resist by incorporating polysilazane and a photoacid producing agent. SOLUTION: This photosensitive polysilazane composition contains polysilazane and a photoacid producing agent. Namely, by adding a photoacid producing agent to polysilazane and then irradiating the polysilazane with light according to a pattern, the polysilazane is decomposed, and a patterned polysilazane film can be obtained by successive developing. The patterned polysilazane film can be directly used as a photoresist. This photoresist is a positive type and has high resolution and higher resistance against oxygen plasma compared to an organic resist. Especially, since the polysilazane film has high resistance against oxygen plasma, it can be used as an alternative material for a silicon-containing resist in a two-layer resist method. |
