| 摘要 |
This semiconductor device is characterized by being provided with: second conductivity-type base regions (3) that are formed on a first conductivity-type drift layer (2a); first conductivity-type source regions (4) positioned inside of the base regions (3); trenches (5), which penetrate the base regions (3) and the source regions (4), and which partition cell regions (14) from each other in a plan view; second conductivity-type protection diffusion layers (7) that are disposed on the bottom portions of the trenches (5); gate electrodes (8) that are embedded in the trenches (5) via gate insulating films (6); a source electrode (10) electrically connected to the source regions (4); and protection contact regions (15), which are disposed at the positions of three or more cell regions (14), and which connect the protection diffusion layers (7) and the source electrode (10) to each other. The semiconductor device is also characterized in that the protection contact regions (15) are disposed such that a triangle (18) having, as apexes, the centers of three protection contact regions (15) at the shortest distances from each other form an acute triangle. |
