| 摘要 |
Graphene is produced by laser treatment of an amorphous carbon layer or layers which have been previously deposited on a substrate by plasma-enhanced CVD. The plasma deposition process comprises (i) plasma CVD of one or more carbon-containing layers from a carbon source onto a Si-containing substrate, wherein the layer(s) comprise an amorphous nanocarbon film, and (ii) laser treatment of the layered substrate from (i) using a laser to convert the amorphous nanocarbon film to one or more layers of graphene. The temperature at each stage does not exceed the melting temperature of the substrate, and is preferably below 400ºC. In one aspect, a thin film comprising one or more silicon based graphene-philic layers are deposited onto a substrate by PECVD before step (i). This enables a non-silicon containing substrate to be coated with graphene. The graphene-philic Si-based layer may comprise an inorganic material such as a silane or siloxane, or an organic material such as trimethylsilane, tetramethylsilane or tetramethyldisiloxane. In a further aspect, the substrate itself contains Si. The plasma deposition process may comprise magneto luminous chemical vapour deposition (MLCVD). The process is particularly useful since it can be carried out at low temperatures, including room temperature, so that substrates with lower melting temperatures, such as plastics, may be coated. |
