Semiconductor device, especially a multilayer circuit structure, production process

摘要

A semiconductor device production process comprises spin etching by applying an etching composition to a rotating semiconductor substrate to leave a via interconnection or to planarize an interlayer dielectric. A semiconductor device production process comprises forming contact vias in an insulating layer on a semiconductor substrate, forming a conductive layer over the insulating layer to bury the vias and etching the conductive layer by rotating the substrate and applying an etching mixture of an oxidizing agent (selected from H2O2, O2, IO4<->, BrO3, ClO3, S2O8<->, KIO3, H5IO6, KOH and HNO3), a promoter (selected from HF, NH4OH, H3PO4, H2SO4, NH4F and HCl) and a buffer solution to leave the conductive layer only within the vias. Independent claims are also included for the following: (i) a semiconductor device production process comprising forming a pattern structure on a semiconductor substrate, forming an interlayer dielectric over the substrate and the structure and planarizing the interlayer dielectric by rotating the substrate and applying the etching mixture described above; (ii) a semiconductor device production process comprising forming contact vias in an insulating layer on a semiconductor substrate, forming a cover layer over the insulating layer to bury the vias, rotating the substrate, heating the substrate by back face supply of hot gas and etching the cover layer by application of an etching composition to leave the cover layer material only within the vias; and (iii) a semiconductor substrate having a core region, with a conductive connection, and a peripheral region with a conductive material-free hole pattern for use as an alignment marking or a scoring frame.