| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a fine transistor with a high yield while suppressing gate insulator film shrinkage and damage.SOLUTION: A semiconductor device comprises: a semiconductor film on an insulating surface; a gate insulator on the semiconductor film; a gate electrode formed on the gate insulator and having a first metal film and a second metal film above the first metal film; and a metal oxide film formed on the gate insulator to be in contact with a side surface of the first metal film and having the same metal element as a metal element in the first metal film. The first metal film has larger ionization tendency than the second metal film. |
