发明名称 Process of optimisation of a monolithic photodiode chip
摘要 Photodiode chip of high threshold frequency has a conduction transfer zone from an active photodiode region of a photo-diode-mesa to the output-pad of a HF output of the photo-diode chip. The connection from the photo-diode-mesa to the output-pad is achieved with a high-resistance conduction/line with an impedance (Z line) distributed over its length and which is at least as high as the effective load impedance (Z load) at the output-pad.
申请公布号 EP1943684(B1) 申请公布日期 2016.12.07
申请号 EP20060805465 申请日期 2006.10.18
申请人 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. 发明人 BACH, Heinz-Gunter;BELING, Andreas
分类号 H01L31/02;H01L31/102;H01L31/105;H01L31/108 主分类号 H01L31/02
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