发明名称 |
Process of optimisation of a monolithic photodiode chip |
摘要 |
Photodiode chip of high threshold frequency has a conduction transfer zone from an active photodiode region of a photo-diode-mesa to the output-pad of a HF output of the photo-diode chip. The connection from the photo-diode-mesa to the output-pad is achieved with a high-resistance conduction/line with an impedance (Z line) distributed over its length and which is at least as high as the effective load impedance (Z load) at the output-pad. |
申请公布号 |
EP1943684(B1) |
申请公布日期 |
2016.12.07 |
申请号 |
EP20060805465 |
申请日期 |
2006.10.18 |
申请人 |
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. |
发明人 |
BACH, Heinz-Gunter;BELING, Andreas |
分类号 |
H01L31/02;H01L31/102;H01L31/105;H01L31/108 |
主分类号 |
H01L31/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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