发明名称 |
FIELD EFFECT TRANSISTOR FOR CHEMICAL SENSING USING GRAPHENE, CHEMICAL SENSOR USING THE TRANSISTOR AND METHOD FOR PRODUCING THE TRANSISTOR |
摘要 |
A field effect transistor (20) for chemical sensing, comprising an electrically conducting and chemically sensitive channel (2) extending between drain (5) and source (6) electrodes. A gate electrode (7) is separated from the channel (2) by a gap (10) through which a chemical to be sensed can reach the channel (2) which comprises a continuous monocrystalline graphene layer (2a) arranged on an electrically insulating graphene layer substrate (1). The graphene layer (2a) extends between and is electrically connected to the source electrode (5) and the drain electrode (6). The substrate supports the graphene layer, allowing it to stay 2-dimensional and continuous, and enables it to be provided on a well defined surface, and be produced and added to the transistor as a separate part. This is beneficial for reproducibility and reduces the risk of damage to the graphene layer during production and after. Low detection limits with low variability between individual transistors are also enabled. There is also provided a chemical sensor (30) using the transistor (20) and a method for providing the transistor (20). |
申请公布号 |
EP2705357(B1) |
申请公布日期 |
2016.12.07 |
申请号 |
EP20110864886 |
申请日期 |
2011.05.05 |
申请人 |
Graphensic AB |
发明人 |
ANDERSSON, Mike;HULTMAN, Lars;LLOYD SPETZ, Anita;PEARCE, Ruth;YAKIMOVA, Rositsa |
分类号 |
G01N27/414;H01L29/06 |
主分类号 |
G01N27/414 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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