| 摘要 |
When inter connection layers (15) in an LSI are cut or joined by radiating charged particles, charge is accumulated in the inter connection layers (15). The accumulated charge is discharged, and elements constituting the LSI are damaged. For this reason, a protective diode (D) is arranged near the inter connection layer (15) irradiated with charged particles. The charge accumulated in the inter connection layer (15) causes the protective diode (D) to breakdown when the potential of the inter connection layer (15) is increased to a predetermined potential. Therefore, by breakdown of the protective diode (D), the charge accumulated in the inter connection layer (15) is discharged, thus preventing damage to the elements constituting the LSI. |
