Nonvolatile memory device and method of setting a reference current in a nonvolatile memory device

摘要

A nonvolatile memory device comprises a cell array including a memory cell. The nonvolatile memory device also includes a reference signal generator configured to generate a reference current for reading data stored in the memory cell. The reference signal generator includes a first circuit coupled to a current summation node and having a reference cell. The first circuit is configured to generate a first current that flows between drain and source terminals of a transistor in the reference cell. The reference signal generator also includes a second circuit coupled to the current summation node and configured to generate a second current that is a temperature-dependent current. The current summation node is configured to combine the first and second currents to generate the reference current that tracks a temperature trend of a current flowing through the memory cell.

主权项

1. A nonvolatile memory device comprising:
a cell array including a memory cell; and a reference signal generator configured to generate a reference current for reading data stored in the memory cell, the reference signal generator comprising: a first circuit coupled to a current summation node and including a reference cell, the reference cell having a floating gate and a control gate, wherein the first circuit is configured to generate a first current that flows between drain and source terminals of a transistor in the reference cell, a second circuit coupled to the current summation node and configured to generate a second current that is a temperature-dependent current, and the current summation node configured to combine the first and second currents to generate the reference current that tracks a temperature trend of a current flowing through the memory cell.