| 发明名称 | Highly sensitive magnetic tunable heterojunction device for resistive switching | ||
| 摘要 | The present invention discloses highly sensitive magnetic heterojunction device consisting of a composite comprising ferromagnetic (La0.66Sr0.34MnO3) LSMO layer with ultra-thin ferrimagnetic CoFe2O4 (CFO) layer capable of giant resistive switching (RS) which can be tuned at micro tesla magnetic field at room temperature. | ||
| 申请公布号 | US9594129(B2) | 申请公布日期 | 2017.03.14 |
| 申请号 | US201214128993 | 申请日期 | 2012.06.25 |
| 申请人 | COUNCIL OF SCIENTIFIC & INDUSTRIAL RESEARCH | 发明人 | Ogale Satishchandra Balkrishna;Sarma Dipankar Das;Rana Abhimanyu Singh;Thakare Vishal Prabhakar;Puri Anil Kumar |
| 分类号 | H01L21/00;G01R33/06;H01L29/24;H01L29/82;H01L43/08;H01L43/10;H01L43/12;H01F13/00;H01L43/02 | 主分类号 | H01L21/00 |
| 代理机构 | Cooper & Dunham LLP | 代理人 | White John P.;Cooper & Dunham LLP |
| 主权项 | 1. A highly sensitive magnetic heterojunction device comprising: substrate of single crystal (001) LaAlO3 (LAO); a first ferromagnetic La0.66Sr0.34MnO3 (LSMO) layer; a second ferromagnetic LSMO layer grown on the first LSMO layer through a mask disposed between the first and second LSMO layer in about 100 mTorr oxygen pressure, to form a thin film and a pure LSMO surface; and ferrimagnetic CoFe2O4 (CFO) layer disposed on the first LSMO layer, the CFO layer having been deposited on the first LSMO layer in about 100 mTorr oxygen pressure, to obtain thickness uniformity and surface smoothness in the CFO layer and to cause giant resistive switching (RS) to be performed at an interface between the LSMO layer and the CFO layer, for alternative high density non-volatile memory application, when the heterojunction device is in presence of a magnetic field of 2 to 100 mT at a temperature in the range of 25 to 30° C. | ||
| 地址 | New Dehli IN | ||