Silica for CMP, aqueous dispersion, and process for producing silica for CMP

摘要

To reduce scratches during polishing while ensuring an appropriately high polishing rate, provided are a silica for CMP satisfying the following (A) to (C), an aqueous dispersion using a silica for CMP, and a method of producing a silica for CMP: (A) a BET specific surface area of 40 m2/g or more and 180 m2/g or less; (B) a particle density measured by a He-gas pycnometer method of 2.24 g/cm3 or more; and (C) a coefficient of variation in primary particle diameter calculated by TEM/image analysis of 0.40 or less.

主权项

1. A silica for CMP, which satisfies the following (A) to (C):
(A) a BET specific surface area of 40 m2/g or more and 180 m2/g or less; (B) a particle density measured by a He-gas pycnometer method of 2.24 g/cm3 or more; and (C) a coefficient of variation in primary particle diameter calculated by TEM/image analysis of 0.40 or less.