Defect classification using topographical attributes

摘要

A method for classification includes receiving an image of an area of a semiconductor wafer on which a pattern has been formed, the area containing a location of interest. At least one value for one or more attributes of the location of interest are computed based upon topographical features of the location of interest in a three-dimensional (3D) map of the area.

主权项

1. A method for classification, comprising:
receiving, by a processing device, a three-dimensional (3D) map of an area of a semiconductor wafer containing a location of interest; generating a 3D shape corresponding to the location of interest based on a fitting of the 3D shape using a polynomial equation to the location of interest, and wherein the 3D shape that is fitted using the polynomial equation expresses a plane component that is used to measure a slope of a topographical surface of the 3D shape in a first direction and another slope of the topographical surface of the 3D shape in a second direction; computing, by the processing device, a value for an attribute of the location of interest based on the topographical surface of the 3D shape that is fitted to the location of interest; and classifying a defect corresponding to the location of interest on the semiconductor wafer based on the value that is computed based on the topographical surface of the 3D shape that is fitted to the location of interest.