| 发明名称 |
Organosilane precursors for ALD/CVD silicon-containing film applications |
| 摘要 |
Disclosed are Si-containing thin film forming precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel-type devices, refractory materials, or aeronautics. |
| 申请公布号 |
US9593133(B2) |
申请公布日期 |
2017.03.14 |
| 申请号 |
US201314415647 |
申请日期 |
2013.07.19 |
| 申请人 |
America Air Liquide, Inc. |
发明人 |
Dussarrat Christian;Kuchenbeiser Glenn;Pallem Venkateswara R. |
| 分类号 |
C07F7/02;C23C16/30;C23C16/44;C23C16/34;C23C16/36;C23C16/40;B05D1/00;H01L21/02;C23C16/455 |
主分类号 |
C07F7/02 |
| 代理机构 |
|
代理人 |
McQueeney Patricia E. |
| 主权项 |
1. A Si-containing thin film forming precursor having the following formula: wherein each L1 and L2 is a nitrogen atom; L1 and L2 being joined together via a carbon bridge having two to three carbon atoms; L1, L2 and the carbon bridge forming a monoanionic ligand bonded to silicon. |
| 地址 |
Fremont CA US |
