| 发明名称 | Forming semiconductor fins with self-aligned patterning | ||
| 摘要 | A method for fabricating a semiconductor device comprises removing a portion of a substrate to form a first cavity in the substrate and depositing an insulator material in the first cavity. A sacrificial pattern is formed on a portion of the insulator material in the first cavity and the substrate. Exposed portions of the substrate are removed to form a fin in the substrate. A gate stack is formed over a portion of the fin. | ||
| 申请公布号 | US9595613(B1) | 申请公布日期 | 2017.03.14 |
| 申请号 | US201615173803 | 申请日期 | 2016.06.06 |
| 申请人 | INTERNATIONAL BUSINESS MACHINES CORPORATION | 发明人 | Cheng Kangguo;Lie Fee Li;Xu Peng |
| 分类号 | H01L29/78;H01L29/06;H01L29/66;H01L21/762 | 主分类号 | H01L29/78 |
| 代理机构 | Cantor Colburn LLP | 代理人 | Cantor Colburn LLP ;Alexanian Vazken |
| 主权项 | 1. A method for fabricating a semiconductor device, the method comprising: forming a first sacrificial layer over a substrate; removing a portion of the first sacrificial layer and the substrate to form a first cavity in the substrate and the first sacrificial layer; depositing an insulator material in the first cavity; forming a sacrificial pattern on a portion of the insulator material and the substrate; removing the first sacrificial layer; removing exposed portions of the substrate to form a fin in the substrate; and forming a gate stack over a portion of the fin. | ||
| 地址 | Armonk NY US | ||