| 发明名称 | Multi-level reversible resistance-switching memory | ||
| 摘要 | A method is provided for operating a reversible resistance-switching memory cell. The method includes programming the reversible resistance-switching memory cell to three or more memory states while limiting the current through the memory cell to less than between about 0.1 microamp and about 30 microamps. | ||
| 申请公布号 | US9595321(B1) | 申请公布日期 | 2017.03.14 |
| 申请号 | US201615049088 | 申请日期 | 2016.02.21 |
| 申请人 | SanDisk Technologies LLC | 发明人 | Sato Yoshihiro |
| 分类号 | G11C11/00;G11C11/56;G11C13/00;H01L45/00;H01L27/24 | 主分类号 | G11C11/00 |
| 代理机构 | Vierra Magen Marcus LLP | 代理人 | Vierra Magen Marcus LLP |
| 主权项 | 1. A method for operating a reversible resistance-switching memory cell, the method comprising: programming the reversible resistance-switching memory cell to three or more memory states while limiting the current through the memory cell to less than between about 0.1 microamp and about 30 microamps. | ||
| 地址 | Plano TX US | ||