Solid-state imaging device, manufacturing method of solid-state imaging device, and electronic device

摘要

The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.

主权项

1. A solid-state imaging device comprising:
a semiconductor substrate; a first photoelectric converter in the semiconductor substrate; a second photoelectric converter in the semiconductor substrate; a third photoelectric converter in the semiconductor substrate; a first groove portion disposed between the first and second photoelectric converters, wherein the first groove portion extends in a depth direction in the semiconductor substrate, wherein the first groove portion includes a first portion of a first insulating film having a fixed charge and a first portion of a second insulating film, and wherein the first portion of the second insulating film is between the first portion of the first insulating film and a first void structure within the first groove portion; and a second groove portion disposed between the second and third photoelectric converters, wherein the second groove portion extends in the depth direction in the semiconductor substrate, wherein the second groove portion includes a second portion of the first insulating film and a second portion of the second insulating film, and wherein the second portion of the second insulating film is between the second portion of the first insulating film and a second void structure within the second groove portion, wherein,
the first insulating film extends from the first groove portion to the second groove portion along a surface of the semiconductor substrate, coating and directly contacting a back face portion of the semiconductor substrate between the first groove portion and the second groove portion.