Capacitive device

摘要

A method of manufacturing a capacitive device. The method includes doping a substrate to form a well region, forming M shoulder portions and (M−1) trenches in the substrate, depositing (M−1) sets of stacked layers along an upper surface of each shoulder portion of the M shoulder portions, sidewalls of the (M−1) trenches, and a bottom surface of each trench of the (M−1) trenches, and etching a plurality of contact holes variously exposing the well region or conductive layers of the (M−1) sets of stacked layers by N patterned masks. An m-th trench of the (M−1) trenches is between an m-th shoulder portion and an (m+1)-th shoulder portion of the M shoulder portions. M is a positive integer equal to or greater than 2 and m is a positive integer from 1 to (M−1). N is a positive integer less than M. Each contact hole of the plurality of contact holes is directly on or above a corresponding shoulder portion of the M shoulder portions.

主权项

1. A method of manufacturing a capacitive device, the method comprising:
doping a substrate to form a well region; forming M shoulder portions and (M−1) trenches in the substrate, wherein an m-th trench of the (M−1) trenches is between an m-th shoulder portion and an (m+1)-th shoulder portion of the M shoulder portions, M being a positive integer equal to or greater than 2, and m being a positive integer from 1 to (M−1); depositing (M−1) sets of stacked layers along an upper surface of each shoulder portion of the M shoulder portions, sidewalls of the (M−1) trenches, and a bottom surface of each trench of the (M−1) trenches; and etching a plurality of contact holes, each contact hole of the plurality of contact holes exposing at least one of the well region or the conductive layers of the (M−1) sets of stacked layers by N patterned masks, N being a positive integer less than M, and each contact hole of the plurality of contact holes being directly on or above a corresponding shoulder portion of the M shoulder portions.