| 发明名称 |
MEMS sensor including an over-travel stop and method of manufacture |
| 摘要 |
A MEMS sensor is disclosed. The MEMS sensor includes a MEMS structure and a substrate coupled to the MEMS structure. The substrate includes a layer of metal and a layer of dielectric material. The MEMS structure moves in response to an excitation. A first over-travel stop is formed on the substrate at a first distance from the MEMS structure. A second over-travel stop on the substrate at a second distance from the MEMS structure. At least one electrode on the substrate at a third distance from the MEMS structure. The first, second and third distances are all different. |
| 申请公布号 |
US9593008(B2) |
申请公布日期 |
2017.03.14 |
| 申请号 |
US201414501792 |
申请日期 |
2014.09.30 |
| 申请人 |
InvenSense, Inc. |
发明人 |
Thompson Matthew Julian;Dueweke Michael;Gurin Ilya;Seeger Joseph |
| 分类号 |
H02N1/04;B81B3/00;H02N11/00;B81B7/02 |
主分类号 |
H02N1/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A MEMS device comprising:
a MEMS structure; a substrate coupled to the MEMS structure, the substrate comprising a layer of metal and a layer of dielectric material; wherein the MEMS structure moves relative to the substrate in response to an excitation; a first over-travel stop is formed on the substrate at a first distance from the MEMS structure; a second over-travel stop on the substrate at a second distance from the MEMS structure; and at least one electrode on the substrate at a third distance from the MEMS structure; wherein the first, second and third distances are all different. |
| 地址 |
San Jose CA US |
