| 主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
performing a pre-process with respect to a substrate, on a surface of which a metal film is formed, such that a first film is formed on the metal film by executing at least one cycle of alternately performing (i) supplying a first processing gas, and (ii) supplying a second processing gas, which is not activated by plasma excitation; and performing a formation process with respect to the substrate after the pre-process has been performed such that a second film is formed on the first film by executing at least one cycle of alternately (i) supplying the first processing gas, and (ii) supplying the second processing gas, which is activated by plasma excitation, wherein supplying the second processing gas, which is not activated by plasma excitation, includes supplying the second processing gas via a first buffer chamber disposed at a space lateral to the substrate, and simultaneously supplying the second processing gas via a second buffer chamber disposed at a space lateral to the substrate, wherein supplying the second processing gas, which is activated by plasma excitation, includes activating the second processing gas by plasma excitation by a first plasma generator in the first buffer chamber to be supplied, and simultaneously activating the second processing gas by plasma excitation by a second plasma generator in the second buffer chamber to be supplied, wherein the first processing gas includes silicon and chlorine, and the second processing gas includes nitrogen, and wherein performing the pre-process includes forming a reaction intermediate including metal, silicon and chlorine by supplying the first processing gas, and supplying the second processing gas, which is not activated by plasma excitation, so as to react with the reaction intermediate such that chlorine is removed. |
