发明名称 |
Chip substrate comprising a plated layer and chip package using the same |
摘要 |
A chip substrate includes laminated conductive portions, and laminated insulation portions that electrically isolate the conductive portions, with a cavity in a recessed shape in a region including the insulation portions on an upper surface of the chip substrate. The substrate includes an insulation layer on the upper surface, excluding a region of the cavity, and a continuous plating layer along a periphery of the chip substrate on the insulation layer. A portion of a top surface of each insulation portion is exposed in the cavity, and another portion of the top surface of each insulation portion is coated with the insulation layer. A chip package includes a chip substrate, with an optical element sealed in the cavity by a sealing member or lens. |
申请公布号 |
US9595642(B2) |
申请公布日期 |
2017.03.14 |
申请号 |
US201514753869 |
申请日期 |
2015.06.29 |
申请人 |
Point Engineering Co., Ltd. |
发明人 |
Nam Ki Myung;Jeon Young Woon;Yun Kyoung Ja |
分类号 |
H01L33/36;H01L33/50;H01L33/48;H01L33/52;H01L33/58;H01L33/54;H01L33/62 |
主分类号 |
H01L33/36 |
代理机构 |
Sunstein Kann Murphy & Timbers LLP |
代理人 |
Sunstein Kann Murphy & Timbers LLP |
主权项 |
1. A chip substrate, comprising:
conductive portions laminated in one direction to constitute the chip substrate; insulation portions vertically penetrating the conductive portions to electrically isolate the conductive portions; a cavity formed at a predetermined depth in a recessed shape in a region including the insulation portions on an upper surface of the chip substrate; an insulation layer coated on an upper surface of the chip substrate excluding a region of the cavity; and a plating layer continuously formed at a predetermined width along a periphery of the chip substrate on the insulation layer, wherein a portion of a top surface of each insulation portion is exposed in the cavity, and another portion of the top surface of each insulation portion is coated with the insulation layer. |
地址 |
Asan-si, Chungcheongnam-do KR |