Semiconductor structure with interfacial layer and method for manufacturing the same

摘要

A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and an interfacial layer formed over the substrate. The semiconductor structure further includes a gate structure formed over the interfacial layer. In addition, the interfacial layer is made of metal germanium oxide, metal silicon oxide, or metal germanium silicon oxide and is in direct contact with a top surface of the substrate.

主权项

1. A method for manufacturing a semiconductor structure, comprising:
(a) forming an oxide layer over a substrate; (b) forming a first metal oxide layer over the oxide layer; (c) forming a metal layer over the first metal oxide layer, such that a top portion of the first metal oxide layer spontaneously reacts with the metal layer to form a second metal oxide layer and a bottom portion of the first metal oxide layer spontaneously reacts with the oxide layer to form an interfacial layer at a temperature lower than 100° C., wherein the interfacial layer is made of a ternary compound.